Special issue of the Journal of Microscopy: Microscopy of Semiconducting Materials 2023

A special issue of the Journal featuring papers from the Microscopy of Semiconducting Materials 2023 meeting has now been published online.

The issue has been guest edited by Thomas Walther, University of Sheffield, UK, and Rachel A. Oliver, University of Cambridge, UK. The meeting took place at Robinson College, University of Cambridge, on 3–6 April 2023.

The issue features the following papers:

Important aspects of investigating optical excitations in semiconductors using a scanning transmission electron microscope
Michael Stöger-Pollach, Krýstina Bukvišova, Keanu Zenz, Leo Stöger,  Ze Scales

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface
J. Smalc-Koziorowska, J. Moneta, G. Muzioł, W. Chromiński, R. Kernke, M. Albrecht, T. Schulz,  I. Belabbas

Field-dependent abundances of hydride molecular ions in atom probe tomography of III-N semiconductors
Aissatou Diagne, Luis Gonzalez Garcia, Samba Ndiaye, Noëlle Gogneau, Maria Vrellou, Jonathan Houard, Lorenzo Rigutti

Towards quantification of doping in gallium arsenide nanostructures by low-energy scanning electron microscopy and conductive atomic force microscopy
Ran Guo, Thomas Walther

The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation
Shuo Liu, Jiawei Dong, Zhenyu Ma, Wenyu Hu, Yong Deng, Yuechun Shi, Xiaoyi Wang, Yang Qiu, Thomas Walther

Differential phase contrast (DPC) mapping electric fields: Optimising experimental conditions
Chen Li, Xiaoke Mu, Maxim Korytov, Ioannis Alexandrou, Eric G. T. Bosch