Banner image courtesy of Yang Qiu, whilst at University of Sheffield
The conference series focusses on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques including scanning probe microscopy, X-ray topography and diffraction are also featured. Developments in materials science and technology covering the complete range of elemental and compound semiconductors feature as well.
Congratulations go to, Ruben Bueno, from Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf, Germany. For his Poster presentation on: HRSTEM and APT studies of grain boundary phase transitions to tune the transport properties of NbFeSb Half-Heusler semiconductors for thermoelectric applications. And Samba Ndiaye, from Normandie Univ., UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Mat´eriaux, Rouen, France. For his poster on: Atom Probe analysis of Ge layers with high Sn and Sb content introduced by pulsed laser melting
We would like to invite attendees of the Microscopy of Semi-Conducting Materials meeting to submit a paper for a special issue of the Journal of Microscopy due to be published in late 2023.
The deadline for papers is 30 June 2023 and submission guidelines can be found at: https://onlinelibrary.wiley.com/page/journal/13652818/homepage/forauthors.html
Please contact the Editorial Office Manager, Jill Hobbs (journaladmin@rms.org.uk), if you have any questions.
University of Sheffield
University of Sheffield
Thomas is Reader in Advanced Electron Microscopy at the University of Sheffield and Director of the Kroto Centre for High Resolution Imaging and Analysis.
His research areas include electron microscopy method development and instrumentation, in particular HREM, EFTEM, ADF-STEM, EELS, ELNES, EDX.
A focus is on quantitative analysis of semiconductor quantum wells and quantum dots, but also the study of interdiffusion and segregation at grain boundaries and within metal nano-particles.
He runs the Microscopy of Semiconducting Materials conference series which is alternatingly held in Oxford and Cambridge, always in odd years.
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